Percolation-Limited Dual Charge Transport in Vertical p

Schottky barrier bulk heterojunction charge percolation graphene logic gate transistor

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
13 May 2020
Historique:
pubmed: 29 4 2020
medline: 29 4 2020
entrez: 29 4 2020
Statut: ppublish

Résumé

Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC

Identifiants

pubmed: 32343583
doi: 10.1021/acs.nanolett.0c00523
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3585-3592

Auteurs

Dong Un Lim (DU)

Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea.

Seongchan Kim (S)

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.

Young Jin Choi (YJ)

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.

Sae Byeok Jo (SB)

Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195-2120, United States.

Jeong Ho Cho (JH)

Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea.

Classifications MeSH