Giant thermopower of ionic gelatin near room temperature.


Journal

Science (New York, N.Y.)
ISSN: 1095-9203
Titre abrégé: Science
Pays: United States
ID NLM: 0404511

Informations de publication

Date de publication:
05 06 2020
Historique:
received: 17 09 2019
accepted: 14 04 2020
pubmed: 2 5 2020
medline: 2 5 2020
entrez: 2 5 2020
Statut: ppublish

Résumé

Harvesting heat from the environment into electricity has the potential to power Internet-of-things (IoT) sensors, freeing them from cables or batteries and thus making them especially useful for wearable devices. We demonstrate a giant positive thermopower of 17.0 millivolts per degree Kelvin in a flexible, quasi-solid-state, ionic thermoelectric material using synergistic thermodiffusion and thermogalvanic effects. The ionic thermoelectric material is a gelatin matrix modulated with ion providers (KCl, NaCl, and KNO

Identifiants

pubmed: 32354840
pii: science.aaz5045
doi: 10.1126/science.aaz5045
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

1091-1098

Informations de copyright

Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Auteurs

Cheng-Gong Han (CG)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Xin Qian (X)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

Qikai Li (Q)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong 999077, China.

Biao Deng (B)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Yongbin Zhu (Y)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Zhijia Han (Z)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Wenqing Zhang (W)

Department of Physics and Shenzhen Institute for Quantum Science and Technology, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Weichao Wang (W)

Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China.

Shien-Ping Feng (SP)

Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong 999077, China.

Gang Chen (G)

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. liuws@sustech.edu.cn gchen2@mit.edu.

Weishu Liu (W)

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China. liuws@sustech.edu.cn gchen2@mit.edu.
Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

Classifications MeSH