Flexible Bottom-Gated Organic Field-Effect Transistors Utilizing Stamped Polymer Layers from the Surface of Water.

flexible device low-temperature process organic field-effect transistor spontaneous spreading process stamping transfer

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
03 Jun 2020
Historique:
pubmed: 5 5 2020
medline: 5 5 2020
entrez: 5 5 2020
Statut: ppublish

Résumé

The facile sequential deposition of functional organic thin films by solution processes is critical for the development of a variety of high-performance organic devices without restriction in terms of materials and processes. Herein, we propose a simple fabrication process that entails stacking multiple layers of functional polymers to fabricate organic field-effect transistors (OFETs). The process involves stamping organic semiconducting layers formed on the surface of water onto a commonly used polymeric dielectric layer. Our scheme makes it possible to independently optimize organic semiconductor films by controlling the solvent evaporation time during the process of film formation on the surface of water. This approach eliminates the need to be concerned about any interference with adjacent layers. Utilizing this process, the fabrication of high-performance bottom-gated OFETs is demonstrated on a glass and a flexible substrate. The OFETs consist of a vertically stacked diketopyrrolopyrrole-based polymer semiconducting layer on the poly(methyl methacrylate) film with a maximum hole mobility of 0.85 cm

Identifiants

pubmed: 32362121
doi: 10.1021/acsami.0c03612
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

25092-25099

Auteurs

Yoori Sung (Y)

School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.

Eul-Yong Shin (EY)

Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.

Yong-Young Noh (YY)

Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea.

Jung-Yong Lee (JY)

School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.

Classifications MeSH