Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H

IZO NIR flexible gas sensor laser annealing sol−gel

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
03 Jun 2020
Historique:
pubmed: 6 5 2020
medline: 6 5 2020
entrez: 6 5 2020
Statut: ppublish

Résumé

A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.

Identifiants

pubmed: 32367710
doi: 10.1021/acsami.0c03257
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

24984-24991

Auteurs

Po-Yi Chang (PY)

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan.
Université de Haute-Alsace, CNRS, IS2M UMR 7361, F-68100 Mulhouse, France.
Université de Strasbourg, 67081 Strasbourg, France.

Ching-Fu Lin (CF)

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan.
Université de Haute-Alsace, CNRS, IS2M UMR 7361, F-68100 Mulhouse, France.
Université de Strasbourg, 67081 Strasbourg, France.

Samer El Khoury Rouphael (S)

Université de Haute-Alsace, CNRS, IS2M UMR 7361, F-68100 Mulhouse, France.
Université de Strasbourg, 67081 Strasbourg, France.

Ting-Hsuan Huang (TH)

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan.

Chang-Mao Wu (CM)

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan.

Dominique Berling (D)

Université de Haute-Alsace, CNRS, IS2M UMR 7361, F-68100 Mulhouse, France.
Université de Strasbourg, 67081 Strasbourg, France.

Ping-Hung Yeh (PH)

Department of Physics, Tamkang University, No. 151, Yingzhuan Road, Tamsui District, New Taipei City 25137, Taiwan.

Chia-Jung Lu (CJ)

Department of Chemistry, National Taiwan Normal University, 162, Section 1, Heping E. Road, Taipei 106, Taiwan.

Hsin-Fei Meng (HF)

Institute of Physics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010 Taiwan.

Hsiao-Wen Zan (HW)

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan.

Olivier Soppera (O)

Université de Haute-Alsace, CNRS, IS2M UMR 7361, F-68100 Mulhouse, France.
Université de Strasbourg, 67081 Strasbourg, France.

Classifications MeSH