Chip-Level Integration of Covalent Organic Frameworks for Trace Benzene Sensing.

benzene detection capacitive gas sensing covalent organic frameworks in situ film growth sub-ppm level

Journal

ACS sensors
ISSN: 2379-3694
Titre abrégé: ACS Sens
Pays: United States
ID NLM: 101669031

Informations de publication

Date de publication:
22 05 2020
Historique:
pubmed: 6 5 2020
medline: 15 5 2021
entrez: 6 5 2020
Statut: ppublish

Résumé

State-of-the-art chemical sensors based on covalent organic frameworks (COFs) are restricted to the transduction mechanism relying on luminescence quenching and/or enhancement. Herein, we present an alternative methodology via a combination of in situ-grown COF films with interdigitated electrodes utilized for capacitive benzene detection. The resultant COF-based sensors exhibit highly sensitive and selective detection at room temperature toward benzene vapor over carbon dioxide, methane, and propane. Their benzene detection limit can reach 340 ppb, slightly inferior to those of the metal oxide semiconductor-based sensors, but with reduced power consumption and increased selectivity. Such a sensing behavior can be attributed to the large dielectric constant of the benzene molecule, distinctive adsorptivity of the chosen COF toward benzene, and structural distortion induced by the custom-made interaction pair, which is corroborated by sorption measurements and density functional theory (DFT) calculations. This study provides new perspectives for fabricating COF-based sensors with specific functionality targeted for selective gas detection.

Identifiants

pubmed: 32367715
doi: 10.1021/acssensors.0c00495
doi:

Substances chimiques

Gases 0
Metal-Organic Frameworks 0
Benzene J64922108F

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

1474-1481

Auteurs

Hongye Yuan (H)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

Nanxi Li (N)

Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Fusionopolis Way, #08-02 Innovis Tower, 138634 Singapore.

Jiajun Linghu (J)

Department of Applied Physics, Chang'an University, Xi'an, Shaanxi 710064, China.

Jinqiao Dong (J)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

Yuxiang Wang (Y)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

Avishek Karmakar (A)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

Jiaren Yuan (J)

Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013, China.

Mengsha Li (M)

Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore.

Pio John S Buenconsejo (PJS)

Facility for Analysis Characterisation Testing Simulation (FACTS), Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore.

Guoliang Liu (G)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

Hong Cai (H)

Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Fusionopolis Way, #08-02 Innovis Tower, 138634 Singapore.

Stephen John Pennycook (SJ)

Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore.

Navab Singh (N)

Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Fusionopolis Way, #08-02 Innovis Tower, 138634 Singapore.

Dan Zhao (D)

Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585 Singapore.

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