High Photon Absorptivity of Quantum Dot Infrared Photodetectors Achieved by the Surface Plasmon Effect of Metal Nanohole Array.

Infrared photodetector Nanohole array QDIP Quantum dot Surface plasmon

Journal

Nanoscale research letters
ISSN: 1931-7573
Titre abrégé: Nanoscale Res Lett
Pays: United States
ID NLM: 101279750

Informations de publication

Date de publication:
05 May 2020
Historique:
received: 01 02 2019
accepted: 16 04 2020
entrez: 7 5 2020
pubmed: 7 5 2020
medline: 7 5 2020
Statut: epublish

Résumé

With the increasing demand for small-scale photodetector devices, quantum dot-based infrared photodetectors have attracted more and more attention in the past decades. In this work, periodic metal nanohole array structures are introduced to the quantum dot infrared photodetectors to enhance the photon absorptivity performance via the surface plasmon enhancement effect in order to overcome the bottleneck of low optical absorption efficiency that exists in conventional photodetectors. The results demonstrate that the optimized metal nanohole array structures can greatly enhance the photon absorptivity up to 86.47% in the specific photodetectors, which is 1.89 times than that of conventional photodetectors without the metal array structures. The large enhancement of the absorptivity can be attributed to the local coupling surface plasmon effect caused by the metal nanohole array structures. It is believed that the study can provide certain theoretical guidance for high-performance nanoscale quantum dot-based infrared photodetectors.

Identifiants

pubmed: 32372245
doi: 10.1186/s11671-020-03326-9
pii: 10.1186/s11671-020-03326-9
pmc: PMC7200969
doi:

Types de publication

Journal Article

Langues

eng

Pagination

98

Subventions

Organisme : National Natural Science Foundation of China
ID : 11874245
Organisme : National Natural Science Foundation of China
ID : 11875032
Organisme : Applied Basic Research Project of Shanxi Province
ID : 201701D221096

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Auteurs

Hongmei Liu (H)

Institute of Solid State Physics, Shanxi Datong University, Datong City, 037009, People's Republic of China.
School of Physical Science and Electronics, Shanxi Datong University, Datong City, 037009, People's Republic of China.

Yongqiang Kang (Y)

School of Physical Science and Electronics, Shanxi Datong University, Datong City, 037009, People's Republic of China. kyq_2000@sohu.com.

Tianhua Meng (T)

Institute of Solid State Physics, Shanxi Datong University, Datong City, 037009, People's Republic of China.
School of Physical Science and Electronics, Shanxi Datong University, Datong City, 037009, People's Republic of China.

Cuifeng Tian (C)

School of Physical Science and Electronics, Shanxi Datong University, Datong City, 037009, People's Republic of China.

Guodong Wei (G)

Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University, Changchun City, 130012, People's Republic of China. wgd588@163.com.

Classifications MeSH