Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering.
NiOx
all-inorganic
high efficiency
light-emitting devices
quantum dots
Journal
Frontiers in chemistry
ISSN: 2296-2646
Titre abrégé: Front Chem
Pays: Switzerland
ID NLM: 101627988
Informations de publication
Date de publication:
2020
2020
Historique:
received:
04
02
2020
accepted:
18
03
2020
entrez:
12
5
2020
pubmed:
12
5
2020
medline:
12
5
2020
Statut:
epublish
Résumé
As the charge transport layer of quantum dot (QD) light-emitting diodes (QLEDs), metal oxides are expected to be more stable compared with organic materials. However, the efficiency of metal oxide-based all-inorganic QLEDs is still far behind that of organic-inorganic hybrid ones. The main reason is the strong interaction between metal oxide and QDs leading to the emission quenching of QDs. Here, we demonstrated nickel oxide (NiO
Identifiants
pubmed: 32391315
doi: 10.3389/fchem.2020.00265
pmc: PMC7191064
doi:
Types de publication
Journal Article
Langues
eng
Pagination
265Informations de copyright
Copyright © 2020 Xu, Li, Lin, Shen, Wang and Du.
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