An in situ decorated cathode with LiF and F@C for performance enhanced Li-S batteries.

Journal

Chemical communications (Cambridge, England)
ISSN: 1364-548X
Titre abrégé: Chem Commun (Camb)
Pays: England
ID NLM: 9610838

Informations de publication

Date de publication:
11 Jun 2020
Historique:
pubmed: 13 5 2020
medline: 13 5 2020
entrez: 13 5 2020
Statut: ppublish

Résumé

A simple but effective in situ decorated cathode is presented for Li-S batteries, utilizing the irreversible discharge products between a cathode additive (carbon fluoride) and Li. The in situ formed LiF and F doped carbon can be functional and beneficial to the battery performance, not only suppressing the "shuttle effect", but also facilitating the electron and ion transportation and accelerating the reaction kinetics.

Identifiants

DOI: 10.1039/d0cc01462a PMID: 32393939
pubmed: 32393939
doi: 10.1039/d0cc01462a
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6444-6447

Auteurs

Cong Gao (C)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Jiayi Yang (J)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Xu Han (X)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Muhammad Abuzar (M)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Yangshen Chen (Y)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Wenjing Liu (W)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Weina Zhang (W)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Jiansheng Wu (J)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Sheng Li (S)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.
ORCID: 0000-0003-1645-6865

Bing Zheng (B)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.

Fengwei Huo (F)

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China. iamsli@njtech.edu.cn iambzheng@njtech.edu.cn iamfwhuo@nitec.edu.cn.
ORCID: 0000-0002-5318-4267

Classifications MeSH