Trimming of silicon-on-insulator ring-resonators via localized laser annealing.

We propose a post-fabrication trimming method for the silicon-on-insulator photonic platform based on localised laser annealing of hydrogen silsesquioxane (HSQ) cladding. The technique is fast, does not degrade the device performance, does not require additional fabrication steps, and can therefore be implemented at minimal cost. Here we experimentally demonstrated how the spectrum of a ring resonator can be shifted by over 1 nm by annealing a section of the device as short as 30 µm, corresponding to a change in the effective refractive index of ∼10