Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
18 May 2020
18 May 2020
Historique:
received:
19
06
2019
accepted:
14
04
2020
entrez:
20
5
2020
pubmed:
20
5
2020
medline:
20
5
2020
Statut:
epublish
Résumé
If a material with an odd number of electrons per unit-cell is insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS
Identifiants
pubmed: 32424136
doi: 10.1038/s41467-020-16132-9
pii: 10.1038/s41467-020-16132-9
pmc: PMC7235044
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
2477Références
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