Midgap radiative centers in carbon-enriched hexagonal boron nitride.

defects hexagonal boron nitride midgap centers single-photon emitters

Journal

Proceedings of the National Academy of Sciences of the United States of America
ISSN: 1091-6490
Titre abrégé: Proc Natl Acad Sci U S A
Pays: United States
ID NLM: 7505876

Informations de publication

Date de publication:
16 06 2020
Historique:
pubmed: 3 6 2020
medline: 3 6 2020
entrez: 3 6 2020
Statut: ppublish

Résumé

When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride (hBN) has revolutionized the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide-bandgap material, which, importantly, can be optically bright in the far-ultraviolet range and which frequently displays midgap defect-related centers of yet-unclear origin, but, interestingly, acting as single-photon emitters. Controlling the hBN doping is of particular interest in view of the possible practical use of this material. Here, we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in the form of a series of well-defined resonances in visible and near-infrared regions, which appear in the luminescence spectra measured under below-bandgap excitation. Two, qualitatively different, C-related radiative centers are identified: One follows the Franck-Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons, and the other shows atomic-like resonances characteristic of intradefect transitions. With a detailed characterization of the energy structure and emission dynamics of these radiative centers, we contribute to the development of controlled doping of hBN with midgap centers.

Identifiants

pubmed: 32482864
pii: 2003895117
doi: 10.1073/pnas.2003895117
pmc: PMC7306815
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

13214-13219

Informations de copyright

Copyright © 2020 the Author(s). Published by PNAS.

Déclaration de conflit d'intérêts

The authors declare no competing interest.

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Auteurs

Maciej Koperski (M)

Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore; msemaci@nus.edu.sg kostya@nus.edu.sg marek.potemski@lncmi.cnrs.fr.

Diana Vaclavkova (D)

Laboratoire National des Champs Magnétiques Intenses, CNRS-Université Grenoble Alpes-Université Paul Sabatier-Institut National des Sciences Appliquées Toulouse-European Magnetic Field Laboratory, 38042 Grenoble, France.

Kenji Watanabe (K)

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Takashi Taniguchi (T)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Kostya S Novoselov (KS)

Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore; msemaci@nus.edu.sg kostya@nus.edu.sg marek.potemski@lncmi.cnrs.fr.

Marek Potemski (M)

Laboratoire National des Champs Magnétiques Intenses, CNRS-Université Grenoble Alpes-Université Paul Sabatier-Institut National des Sciences Appliquées Toulouse-European Magnetic Field Laboratory, 38042 Grenoble, France; msemaci@nus.edu.sg kostya@nus.edu.sg marek.potemski@lncmi.cnrs.fr.
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, PL-02-093 Warsaw, Poland.

Classifications MeSH