Engineering a Ga-Gradient by One-Step Sputtering to Achieve Over 15% Efficiency of Cu(In,Ga)Se

Cu(In,Ga)Se2 Ga-grading flexible one-step sputtering quaternary target

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
24 Jun 2020
Historique:
pubmed: 3 6 2020
medline: 3 6 2020
entrez: 3 6 2020
Statut: ppublish

Résumé

A one-step sputtering process using a quaternary target has been demonstrated to be a simple route to form Cu(In,Ga)Se

Identifiants

DOI: 10.1021/acsami.0c07714 PMID: 32485100
pubmed: 32485100
doi: 10.1021/acsami.0c07714
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

28320-28328

Auteurs

Yu-Hsiang Wang (YH)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Pin-Han Ho (PH)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Wei-Chih Huang (WC)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Lung-Hsin Tu (LH)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Hsin-Fang Chang (HF)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Chung-Hao Cai (CH)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Chih-Huang Lai (CH)

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
ORCID: 0000-0002-9250-0015

Classifications MeSH