The Weak 3D Topological Insulator Bi
crystal growth
crystal structure
topological band gap
topological insulators
weak topological insulators
Journal
Chemistry (Weinheim an der Bergstrasse, Germany)
ISSN: 1521-3765
Titre abrégé: Chemistry
Pays: Germany
ID NLM: 9513783
Informations de publication
Date de publication:
01 Dec 2020
01 Dec 2020
Historique:
received:
21
04
2020
pubmed:
4
6
2020
medline:
4
6
2020
entrez:
4
6
2020
Statut:
ppublish
Résumé
Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi
Identifiants
pubmed: 32490557
doi: 10.1002/chem.202001953
pmc: PMC7756808
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
15549-15557Subventions
Organisme : Deutsche Forschungsgemeinschaft
ID : 247310070
Organisme : Deutsche Forschungsgemeinschaft
ID : 39085490
Informations de copyright
© 2020 The Authors. Published by Wiley-VCH GmbH.
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