Multilevel Resistive Switching Memory Based on a CH

Iodine vacancies KCl-doped MAPIC films Trap-controlled SCLC conduction mechanism Tri-state resistive switching behavior

Journal

Nanoscale research letters
ISSN: 1931-7573
Titre abrégé: Nanoscale Res Lett
Pays: United States
ID NLM: 101279750

Informations de publication

Date de publication:
05 Jun 2020
Historique:
received: 26 02 2020
accepted: 18 05 2020
entrez: 7 6 2020
pubmed: 7 6 2020
medline: 7 6 2020
Statut: epublish

Résumé

High-quality CH

Identifiants

pubmed: 32504244
doi: 10.1186/s11671-020-03356-3
pii: 10.1186/s11671-020-03356-3
pmc: PMC7275113
doi:

Types de publication

Journal Article

Langues

eng

Pagination

126

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Auteurs

Fengzhen Lv (F)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China. lvfzh17@mailbox.gxnu.edu.cn.

Kang Ling (K)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Tingting Zhong (T)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Fuchi Liu (F)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China. liufuchi@gxnu.edu.cn.

Xiaoguang Liang (X)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Changming Zhu (C)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Jun Liu (J)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Wenjie Kong (W)

College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.

Classifications MeSH