Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
09 Jun 2020
Historique:
received: 17 03 2020
accepted: 19 05 2020
entrez: 11 6 2020
pubmed: 11 6 2020
medline: 11 6 2020
Statut: epublish

Résumé

In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO

Identifiants

pubmed: 32518357
doi: 10.1038/s41598-020-66339-5
pii: 10.1038/s41598-020-66339-5
pmc: PMC7283246
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

9276

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Auteurs

Kwan-Jun Heo (KJ)

College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.
R&D center, SK hynix, 2091, Gyeongchung-daero, Bubal-eup, Icheon-si, Gyeonggi-do, 13558, Korea.

Han-Sang Kim (HS)

College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.

Jae-Yun Lee (JY)

College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.

Sung-Jin Kim (SJ)

College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea. ksj@cbnu.ac.kr.

Classifications MeSH