RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots.
color down-conversion
light scattering
micro-LED display
nanoporous GaN
quantum dot
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
08 Jul 2020
08 Jul 2020
Historique:
pubmed:
11
6
2020
medline:
11
6
2020
entrez:
11
6
2020
Statut:
ppublish
Résumé
The multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.
Identifiants
pubmed: 32519834
doi: 10.1021/acsami.0c00839
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM