RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots.

color down-conversion light scattering micro-LED display nanoporous GaN quantum dot

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
08 Jul 2020
Historique:
pubmed: 11 6 2020
medline: 11 6 2020
entrez: 11 6 2020
Statut: ppublish

Résumé

The multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.

Identifiants

pubmed: 32519834
doi: 10.1021/acsami.0c00839
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

30890-30895

Auteurs

Jin-Ho Kang (JH)

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.

Bingjun Li (B)

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.

Tianshuo Zhao (T)

Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520, United States.
Energy Sciences Institute, Yale University, West Haven, Connecticut 06516, United States.

Muhammad Ali Johar (MA)

Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea.

Chien-Chung Lin (CC)

Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute ITRI, Hsinchu 31057, Taiwan.

Yen-Hsiang Fang (YH)

Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute ITRI, Hsinchu 31057, Taiwan.

Wei-Hung Kuo (WH)

Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute ITRI, Hsinchu 31057, Taiwan.

Kai-Ling Liang (KL)

Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute ITRI, Hsinchu 31057, Taiwan.

Shu Hu (S)

Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520, United States.
Energy Sciences Institute, Yale University, West Haven, Connecticut 06516, United States.

Sang-Wan Ryu (SW)

Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea.

Jung Han (J)

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.

Classifications MeSH