Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from NanoARPES.

flat bands nanoARPES twisted bilayer graphene van Hove singularitys van der Waals heterostructures

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Aug 2020
Historique:
received: 09 03 2020
revised: 30 04 2020
accepted: 14 05 2020
pubmed: 13 6 2020
medline: 13 6 2020
entrez: 13 6 2020
Statut: ppublish

Résumé

The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue toward engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. Direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines the effect of electrical doping on the electronic band structure of twisted bilayer graphene using a back-gated device architecture for angle-resolved photoemission measurements with a nano-focused light spot. A twist angle of 12.2° is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.

Identifiants

pubmed: 32529706
doi: 10.1002/adma.202001656
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2001656

Subventions

Organisme : Office of Science
Organisme : U.S. Department of Energy
ID : DE-SC0020323

Informations de copyright

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Auteurs

Alfred J H Jones (AJH)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Ryan Muzzio (R)

Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.

Paulina Majchrzak (P)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Sahar Pakdel (S)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Davide Curcio (D)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Klara Volckaert (K)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Deepnarayan Biswas (D)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Jacob Gobbo (J)

Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.

Simranjeet Singh (S)

Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.

Jeremy T Robinson (JT)

US Naval Research Laboratory, Washington, D.C., 20375, USA.

Kenji Watanabe (K)

National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.

Takashi Taniguchi (T)

National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.

Timur K Kim (TK)

Diamond Light Source, Division of Science, Didcot, OX11 0DE, UK.

Cephise Cacho (C)

Diamond Light Source, Division of Science, Didcot, OX11 0DE, UK.

Nicola Lanata (N)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Jill A Miwa (JA)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Philip Hofmann (P)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Jyoti Katoch (J)

Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.

Søren Ulstrup (S)

Department of Physics and Astronomy, Aarhus University, Aarhus C, 8000, Denmark.

Classifications MeSH