Transition from freestanding SnO
finite element method simulation
laterally aligned nanowires
planar growth
tin oxide
vapor–liquid–solid nanowire growth
Journal
Beilstein journal of nanotechnology
ISSN: 2190-4286
Titre abrégé: Beilstein J Nanotechnol
Pays: Germany
ID NLM: 101551563
Informations de publication
Date de publication:
2020
2020
Historique:
received:
19
02
2020
accepted:
07
05
2020
entrez:
20
6
2020
pubmed:
20
6
2020
medline:
20
6
2020
Statut:
epublish
Résumé
In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO
Identifiants
pubmed: 32551209
doi: 10.3762/bjnano.11.69
pmc: PMC7277887
doi:
Types de publication
Journal Article
Langues
eng
Pagination
843-853Informations de copyright
Copyright © 2020, Bürger et al.; licensee Beilstein-Institut.
Références
Nanotechnology. 2012 Jul 5;23(26):265704
pubmed: 22699683
Chem Rev. 2019 Aug 14;119(15):8958-8971
pubmed: 30998006
Nano Lett. 2018 Apr 11;18(4):2666-2671
pubmed: 29579392
Nano Lett. 2013 Jun 12;13(6):2786-91
pubmed: 23634940
Nanotechnology. 2017 Mar 3;28(9):095206
pubmed: 28067211
Nat Nanotechnol. 2007 Sep;2(9):541-4
pubmed: 18654364
Nanotechnology. 2008 Mar 5;19(9):095508
pubmed: 21817675
ACS Nano. 2010 Apr 27;4(4):1829-36
pubmed: 20235570
Nano Lett. 2014 Jun 11;14(6):3014-22
pubmed: 24837617
J Am Chem Soc. 2007 May 16;129(19):6070-1
pubmed: 17458965
Nanotechnology. 2008 Jul 30;19(30):305202
pubmed: 21828756
Nano Lett. 2019 Dec 11;19(12):9102-9111
pubmed: 31730748