"Stickier"-Surface Sb

GeSb2Te4 Sb2Te3 template fast crystallization phase-change memory surface state

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
22 Jul 2020
Historique:
pubmed: 1 7 2020
medline: 1 7 2020
entrez: 30 6 2020
Statut: ppublish

Résumé

Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance but remains insufficient of the operating speed to replace cache memory (the fastest memory in a computer). In this work, a novel approach using Sb

Identifiants

DOI: 10.1021/acsami.0c07973 PMID: 32597166
pubmed: 32597166
doi: 10.1021/acsami.0c07973
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

33397-33407

Auteurs

Jinlong Feng (J)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, Leipzig 04318, Germany.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.
ORCID: 0000-0002-7203-7625

Andriy Lotnyk (A)

Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, Leipzig 04318, Germany.
Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.
ORCID: 0000-0002-0000-9334

Hagen Bryja (H)

Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, Leipzig 04318, Germany.

Xiaojie Wang (X)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Meng Xu (M)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Qi Lin (Q)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Xiaomin Cheng (X)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Ming Xu (M)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.
ORCID: 0000-0002-2730-283X

Hao Tong (H)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Xiangshui Miao (X)

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan 430074, China.

Classifications MeSH