Band Bending and Valence Band Quantization at Line Defects in MoS

MoS2 band bending mirror twin boundary polarization charge scanning tunnelling spectroscopy

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
28 Jul 2020
Historique:
pubmed: 1 7 2020
medline: 1 7 2020
entrez: 1 7 2020
Statut: ppublish

Résumé

The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS

Identifiants

pubmed: 32602698
doi: 10.1021/acsnano.0c04945
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

9176-9187

Auteurs

Clifford Murray (C)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.

Camiel van Efferen (C)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.

Wouter Jolie (W)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.
Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Münster D-48149, Germany.

Jeison Antonio Fischer (JA)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.

Joshua Hall (J)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.

Achim Rosch (A)

Institut für Theoretische Physik, Universität zu Köln, Cologne D-50937, Germany.

Arkady V Krasheninnikov (AV)

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden D-01328, Germany.
Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland.

Hannu-Pekka Komsa (HP)

Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland.
Microelectronics Research Unit, University of Oulu, Oulu FI-90014, Finland.

Thomas Michely (T)

II. Physikalisches Institut, Universität zu Köln, Cologne D-50937, Germany.

Classifications MeSH