Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.

In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 10