Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling.
GeTe
crystallization
phase-change materials
stress
wafer curvature
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
26 Jun 2020
26 Jun 2020
Historique:
received:
14
04
2020
revised:
16
06
2020
accepted:
22
06
2020
entrez:
2
7
2020
pubmed:
2
7
2020
medline:
2
7
2020
Statut:
epublish
Résumé
Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stress evolution during crystallization in thin GeTe films capped with SiO
Identifiants
pubmed: 32604948
pii: nano10061247
doi: 10.3390/nano10061247
pmc: PMC7353090
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Agence Nationale de la Recherche
ID : ANR-15-CE24-0021
Références
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pubmed: 29445317