Rational Design of Oxygen Deficiency-Controlled Tungsten Oxide Electrochromic Films with an Exceptional Memory Effect.

electrochromism inorganic memory effect optical oxygen deficiencies tungsten oxide

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
22 Jul 2020
Historique:
pubmed: 3 7 2020
medline: 3 7 2020
entrez: 3 7 2020
Statut: ppublish

Résumé

Owing to their nonemissive characteristics, electrochromic materials promise distinct advantages in developing next-generation eye-friendly information displays. Yet, it remains a challenge to manipulate the structure of the materials to achieve a strong memory effect with high optical contrast, which is of importance for displaying images with essentially zero energy consumption. Here, we design a mixed crystalline WO

Identifiants

DOI: 10.1021/acsami.0c06786 PMID: 32610893
pubmed: 32610893
doi: 10.1021/acsami.0c06786
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

32658-32665

Auteurs

Yingdi Shi (Y)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.

Mingjun Sun (M)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.

Yong Zhang (Y)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.
ORCID: 0000-0002-7625-2234

Jiewu Cui (J)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.
ORCID: 0000-0003-4613-4795

Xia Shu (X)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.

Yan Wang (Y)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.
ORCID: 0000-0003-1479-1715

Yongqiang Qin (Y)

School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China.
Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.

Jiaqin Liu (J)

Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.
Institute of Industry & Equipment Technology, Hefei University of Technology, No. 193 Tunxi Road, Hefei, Anhui 230009, China.
ORCID: 0000-0003-1663-7447

Hark Hoe Tan (HH)

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia.

Yucheng Wu (Y)

Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, Hefei 230009, China.
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China.
ORCID: 0000-0002-1549-0546

Classifications MeSH