Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
01 Jul 2020
01 Jul 2020
Historique:
received:
07
02
2020
accepted:
08
06
2020
entrez:
3
7
2020
pubmed:
3
7
2020
medline:
3
7
2020
Statut:
epublish
Résumé
Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO
Identifiants
pubmed: 32612212
doi: 10.1038/s41598-020-67651-w
pii: 10.1038/s41598-020-67651-w
pmc: PMC7329818
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
10702Subventions
Organisme : Japan Society for the Promotion of Science
ID : JP18J14276
Organisme : Japan Society for the Promotion of Science
ID : R2705
Organisme : Japan Science and Technology Agency
ID : JPMJPR13C4
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