Tailoring Electronic and Magnetic Properties of Graphene by Phosphorus Doping.
doping
functionalization
graphene
magnetism
phosphorus
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
29 Jul 2020
29 Jul 2020
Historique:
pubmed:
4
7
2020
medline:
4
7
2020
entrez:
4
7
2020
Statut:
ppublish
Résumé
The electronic and magnetic properties of graphene can be modulated by doping it with other elements, especially those with a different number of valence electrons. In this article, we first provide a three-dimensional reconstruction of the atomic structure of a phosphorus substitution in graphene using aberration-corrected scanning transmission electron microscopy. Turning then to theoretical calculations based on the density functional theory (DFT), we show that doping phosphorus in various bonding configurations can induce magnetism in graphene. Our simulations reveal that the electronic and magnetic properties of P-doped (Gr-P) and/or phosphono-functionalized graphene (Gr-PO
Identifiants
pubmed: 32618184
doi: 10.1021/acsami.0c07564
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM