Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View.

Mn impurities ZnSe/GaAs interface diffusion diluted magnetic semiconductors dopants segregation

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
04 Jul 2020
Historique:
received: 07 06 2020
revised: 28 06 2020
accepted: 01 07 2020
entrez: 9 7 2020
pubmed: 9 7 2020
medline: 9 7 2020
Statut: epublish

Résumé

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Identifiants

pubmed: 32635471
pii: nano10071315
doi: 10.3390/nano10071315
pmc: PMC7407323
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Russian Science Foundation
ID : 14-42-00015
Organisme : Nederlandse Organisatie voor Wetenschappelijk Onderzoek
ID : DMS 1115252

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Auteurs

Davide F Grossi (DF)

Department of Applied Physics and Institute for Photonic Integration, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

Sebastian Koelling (S)

Department of Applied Physics and Institute for Photonic Integration, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

Pavel A Yunin (PA)

Institute for Physics of Microstructures RAS, 603950 Nizhny Novgorod, Russia.
Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia.

Paul M Koenraad (PM)

Department of Applied Physics and Institute for Photonic Integration, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

Grigory V Klimko (GV)

Ioffe Institute, 194021 St. Petersburg, Russia.

Sergey V Sorokin (SV)

Ioffe Institute, 194021 St. Petersburg, Russia.

Mikhail N Drozdov (MN)

Institute for Physics of Microstructures RAS, 603950 Nizhny Novgorod, Russia.

Sergey V Ivanov (SV)

Ioffe Institute, 194021 St. Petersburg, Russia.

Alexey A Toropov (AA)

Ioffe Institute, 194021 St. Petersburg, Russia.

Andrei Y Silov (AY)

Department of Applied Physics and Institute for Photonic Integration, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.

Classifications MeSH