Effect of the Thermal Boundary Resistance in Metal/Dielectric Thermally Conductive Layers on Power Generation of Silicon Nanowire Microthermoelectric Generators.

diffusion interfacial bonding strength metal/dielectric interface silicon nanowire thermoelectric generator thermal boundary resistance thermally conductive layer

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
29 Jul 2020
Historique:
pubmed: 9 7 2020
medline: 9 7 2020
entrez: 9 7 2020
Statut: ppublish

Résumé

In microthermoelectric generators (μTEGs), parasitic thermal resistance must be suppressed to increase the temperature difference across thermocouples for optimum power generation. A thermally conductive (TC) layer is typically used in μTEGs to guide the heat flow from the heat source to the hot junction of each thermocouple. In this study, we investigate the effect of the thermal boundary resistance (TBR) in metal/dielectric TC layers on the power generation of silicon nanowire (SiNW) μTEGs. We prepared various metal/adhesion/dielectric TC layers using different metal, adhesion, and dielectric layers and measured the thermal resistance using the frequency-domain thermoreflectance method. We found that the thermal resistance was significantly different, mainly due to the TBR of the metal/dielectric interfaces. Interface characterization highlights the significant role of the interfacial bonding strength and interdiffusion in TBR. We fabricated a prototype SiNW-μTEG with different TC layers for testing, finding that the power generation increased significantly when the thermal resistance of the TC layer was lowered. This study helps to understand the underlying physics of thermal transport at interfaces and provides a guideline for the design and fabrication of μTEGs to enhance power generation for effective energy harvesting.

Identifiants

pubmed: 32635712
doi: 10.1021/acsami.0c09253
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

34441-34450

Auteurs

Tianzhuo Zhan (T)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Shuaizhe Ma (S)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Zhicheng Jin (Z)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Hiroki Takezawa (H)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Kohei Mesaki (K)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Motohiro Tomita (M)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Yen-Ju Wu (YJ)

National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

Yibin Xu (Y)

National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

Takashi Matsukawa (T)

National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan.

Takeo Matsuki (T)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan.

Takanobu Watanabe (T)

Waseda University, 3-4-1 O̅kubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Classifications MeSH