Roadmap on emerging hardware and technology for machine learning.


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
01 Jan 2021
Historique:
pubmed: 18 7 2020
medline: 18 7 2020
entrez: 18 7 2020
Statut: ppublish

Résumé

Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing. A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. Building such a system, nevertheless, faces a number of challenges, ranging from materials selection, device optimization, circuit fabrication and system integration, to name a few. The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.

Identifiants

pubmed: 32679577
doi: 10.1088/1361-6528/aba70f
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

012002

Auteurs

Karl Berggren (K)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.

Qiangfei Xia (Q)

Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America.

Konstantin K Likharev (KK)

Stony Brook University, Stony Brook, NY 11794, Unites States.

Dmitri B Strukov (DB)

Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, United States of America.

Hao Jiang (H)

School of Engineering & Applied Science Yale University, CT, United States of America.

Thomas Mikolajick (T)

NaMLab gGmbH and TU Dresden, Germany.

Damien Querlioz (D)

Université Paris-Saclay, CNRS, France.

Martin Salinga (M)

Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Germany.

John R Erickson (JR)

Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America.

Shuang Pi (S)

Lam Research, Fremont, CA, United States of America.

Feng Xiong (F)

Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America.

Peng Lin (P)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.

Can Li (C)

Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, China.

Yu Chen (Y)

School of information science and technology, Fudan University, Shanghai, People's Republic of China.

Shisheng Xiong (S)

School of information science and technology, Fudan University, Shanghai, People's Republic of China.

Brian D Hoskins (BD)

Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.

Matthew W Daniels (MW)

Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.

Advait Madhavan (A)

Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States of America.

James A Liddle (JA)

Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.

Jabez J McClelland (JJ)

Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.

Yuchao Yang (Y)

School of Electronics Engineering and Computer Science, Peking University, Beijing, People's Republic of China.

Jennifer Rupp (J)

Department of Materials Science and Engineering and Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.
Electrochemical Materials, ETHZ Department of Materials, Hönggerbergring 64, Zürich 8093, Switzerland.

Stephen S Nonnenmann (SS)

Department of Mechanical & Industrial Engineering, University of Massachusetts-Amherst, MA, United States of America.

Kwang-Ting Cheng (KT)

School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.

Nanbo Gong (N)

IBM T J Watson Research Center, Yorktown Heights, NY 10598, United States of America.

Miguel Angel Lastras-Montaño (MA)

Instituto de Investigación en Comunicación Óptica, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, México.

A Alec Talin (AA)

Sandia National Laboratories, Livermore, CA 94551, United States of America.

Alberto Salleo (A)

Department of Materials Science and Engineering, Stanford University, Stanford, California, United States of America.

Bhavin J Shastri (BJ)

Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston ON KL7 3N6, Canada.

Thomas Ferreira de Lima (TF)

Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America.

Paul Prucnal (P)

Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America.

Alexander N Tait (AN)

Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America.

Yichen Shen (Y)

Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America.

Huaiyu Meng (H)

Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America.

Charles Roques-Carmes (C)

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.

Zengguang Cheng (Z)

Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

Harish Bhaskaran (H)

Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.

Deep Jariwala (D)

Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia PA 19104, United States of America.

Han Wang (H)

University of Southern California, Los Angeles, CA 90089, United States of America.

Jeffrey M Shainline (JM)

Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America.

Kenneth Segall (K)

Department of Physics and Astronomy, Colgate University, NY 13346, United States of America.

J Joshua Yang (JJ)

Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America.

Kaushik Roy (K)

School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America.

Suman Datta (S)

University of Notre Dame, Notre Dame, IN 46556, United States of America.

Arijit Raychowdhury (A)

Georgia Institute of Technology, Atlanta, GA 30332, United States of America.

Classifications MeSH