Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
17 Jul 2020
17 Jul 2020
Historique:
received:
06
06
2019
accepted:
13
05
2020
entrez:
19
7
2020
pubmed:
19
7
2020
medline:
19
7
2020
Statut:
epublish
Résumé
Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb
Identifiants
pubmed: 32681142
doi: 10.1038/s41598-020-67377-9
pii: 10.1038/s41598-020-67377-9
pmc: PMC7367863
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
11894Subventions
Organisme : Agence Nationale de la Recherche (French National Research Agency)
ID : EIPHI Graduate School ANR-17-EURE-0002
Organisme : Agence Nationale de la Recherche (French National Research Agency)
ID : EIPHI Graduate School ANR-17-EURE-0002
Organisme : Conseil régional de Bourgogne-Franche-Comté (Regional Council of Burgundy)
ID : FEDER Program
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