Impact and behavior of Sn during the Ni/GeSn solid-state reaction.

GeSn Ni Sn segregation X-ray diffraction solid-state reaction transmission electron microscopy

Journal

Journal of applied crystallography
ISSN: 0021-8898
Titre abrégé: J Appl Crystallogr
Pays: United States
ID NLM: 9876190

Informations de publication

Date de publication:
01 Jun 2020
Historique:
received: 11 12 2019
accepted: 04 03 2020
entrez: 21 7 2020
pubmed: 21 7 2020
medline: 21 7 2020
Statut: epublish

Résumé

Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out.

Identifiants

pubmed: 32684875
doi: 10.1107/S1600576720003064
pii: vh5112
pmc: PMC7312141
doi:

Types de publication

Journal Article

Langues

eng

Pagination

605-613

Informations de copyright

© International Union of Crystallography 2020.

Auteurs

Andrea Quintero (A)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.
Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.

Patrice Gergaud (P)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Jean-Michel Hartmann (JM)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Vincent Delaye (V)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Vincent Reboud (V)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Eric Cassan (E)

Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.

Philippe Rodriguez (P)

Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Classifications MeSH