Engineering long spin coherence times of spin-orbit qubits in silicon.


Journal

Nature materials
ISSN: 1476-4660
Titre abrégé: Nat Mater
Pays: England
ID NLM: 101155473

Informations de publication

Date de publication:
Jan 2021
Historique:
received: 09 08 2019
accepted: 18 06 2020
pubmed: 22 7 2020
medline: 22 7 2020
entrez: 22 7 2020
Statut: ppublish

Résumé

Electron-spin qubits have long coherence times suitable for quantum technologies. Spin-orbit coupling promises to greatly improve spin qubit scalability and functionality, allowing qubit coupling via photons, phonons or mutual capacitances, and enabling the realization of engineered hybrid and topological quantum systems. However, despite much recent interest, results to date have yielded short coherence times (from 0.1 to 1 μs). Here we demonstrate ultra-long coherence times of 10 ms for holes where spin-orbit coupling yields quantized total angular momentum. We focus on holes bound to boron acceptors in bulk silicon 28, whose wavefunction symmetry can be controlled through crystal strain, allowing direct control over the longitudinal electric dipole that causes decoherence. The results rival the best electron-spin qubits and are 10

Identifiants

pubmed: 32690913
doi: 10.1038/s41563-020-0743-3
pii: 10.1038/s41563-020-0743-3
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

38-42

Références

Tyryshkin, A. M. et al. Electron spin coherence exceeding seconds in high-purity silicon. Nat. Mater. 11, 143–147 (2012).
doi: 10.1038/nmat3182
Muhonen, J. T. et al. Storing quantum information for 30 seconds in a nanoelectronic device. Nat. Nanotechnol. 9, 986–991 (2014).
doi: 10.1038/nnano.2014.211
Veldhorst, M. et al. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nat. Nanotechnol. 9, 981–985 (2014).
doi: 10.1038/nnano.2014.216
Bar-Gill, N., Pham, L. M., Jarmola, A., Budker, D. & Walsworth, R. L. Solid-state electronic spin coherence time approaching one second. Nat. Commun. 4, 1743 (2013).
doi: 10.1038/ncomms2771
Bulaev, D. V. & Loss, D. Spin relaxation and decoherence of holes in quantum dots. Phys. Rev. Lett. 95, 076805 (2005).
doi: 10.1103/PhysRevLett.95.076805
Xiang, Z.-L., Ashhab, S., You, J. Q. & Nori, F. Hybrid quantum circuits: superconducting circuits interacting with other quantum systems. Rev. Mod. Phys. 85, 623–653 (2013).
doi: 10.1103/RevModPhys.85.623
Mi, X. et al. A coherent spin–photon interface in silicon. Nature 555, 509–603 (2018).
doi: 10.1038/nature25769
Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Observation of the spin Hall effect in semiconductors. Science 306, 1910–1913 (2004).
doi: 10.1126/science.1105514
Georgescu, I. M., Ashhab, S. & Nori, F. Quantum simulation. Rev. Mod. Phys. 86, 153–185 (2014).
doi: 10.1103/RevModPhys.86.153
Sau, J. D., Lutchyn, R. M., Tewari, S. & das Sarma, S. Generic new platform for topological quantum computation using semiconductor heterostructures. Phys. Rev. Lett. 104, 040502 (2010).
doi: 10.1103/PhysRevLett.104.040502
Nadj-Perge, S., Frolov, S. M., Bakkers, E. P. A. M. & Kouwenhoven, L. P. Spin orbit qubit in a semiconductor nanowire. Nature 468, 1084–1087 (2010).
doi: 10.1038/nature09682
de Greve, K. et al. Ultrafast coherent control and suppressed nuclear feedback of a single quantum dot hole qubit. Nat. Phys. 7, 872–878 (2011).
doi: 10.1038/nphys2078
Song, Y. P. & Golding, B. Manipulation and decoherence of acceptor states in silicon. Europhys. Lett. 95, 47004 (2011).
doi: 10.1209/0295-5075/95/47004
Maurand, R. et al. A CMOS silicon spin qubit. Nat. Commun. 7, 13575 (2016).
doi: 10.1038/ncomms13575
Watzinger, H. et al. A germanium hole spin qubit. Nat. Commun. 9, 3902 (2018).
doi: 10.1038/s41467-018-06418-4
Hendrickx, N. W., Franke, D. P., Sammak, A., Scappucci, G. & Veldhorst, M. Fast two-qubit logic with holes in germanium. Nature 577, 487–491 (2020).
doi: 10.1038/s41586-019-1919-3
Luttinger, J. M. & Kohn, W. Motion of electrons and holes in perturbed periodic fields. Phys. Rev. 97, 869–883 (1955).
doi: 10.1103/PhysRev.97.869
Beaudoin, F., Lachance-Quirion, D., Coish, W. A. & Pioro-Ladrìere, M. Coupling a single electron spin to a microwave resonator: controlling transverse and longitudinal couplings. Nanotechnology 27, 464003 (2016).
doi: 10.1088/0957-4484/27/46/464003
Lambert, N. et al. Amplified and tunable transverse and longitudinal spin-photon coupling in hybrid circuit-QED. Phys. Rev. B 97, 125429 (2018).
doi: 10.1103/PhysRevB.97.125429
Winkler, R. Spin density matrix of spin-3/2 hole systems. Phys. Rev. B 70, 125301 (2004).
doi: 10.1103/PhysRevB.70.125301
Kim, D. et al. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit. Nature 511, 70–74 (2014).
doi: 10.1038/nature13407
Kawakami, E. et al. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nat. Nanotechnol. 9, 666–670 (2014).
doi: 10.1038/nnano.2014.153
Yoneda, J. et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat. Nanotechnol. 13, 102–106 (2018).
doi: 10.1038/s41565-017-0014-x
Zajac, D. M. et al. Resonantly driven CNOT gate for electron spins. Science 359, 439–442 (2018).
doi: 10.1126/science.aao5965
Salfi, J., Mol, J. A., Culcer, D. & Rogge, S. Charge-insensitive single-atom spin-orbit qubit in silicon. Phys. Rev. Lett. 116, 246801 (2016).
doi: 10.1103/PhysRevLett.116.246801
van der Heijden, J. et al. Probing the spin states of a single acceptor atom. Nano Lett. 14, 1492–1496 (2014).
van der Heijden, J. et al. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. Sci. Adv. 4, eaat9199 (2018).
doi: 10.1126/sciadv.aat9199
Neubrand, H. ESR from boron in silicon at zero and small external stress I. Line positions and line structure. Phys. Status Solidi B 86, 269–275 (1978).
doi: 10.1002/pssb.2220860131
Stegner, A. R. et al. Isotope effect on electron paramagnetic resonance of boron acceptors in silicon. Phys. Rev. B 82, 115213 (2010).
doi: 10.1103/PhysRevB.82.115213
Dirksen, P., Henstra, A. & Wenckebach, W. T. An ESR hole burning study of dynamic nuclear polarisation of
doi: 10.1088/0953-8984/1/44/024
Ruskov, R. & Tahan, C. On-chip cavity quantum phonodynamics with an acceptor qubit in silicon. Phys. Rev. B 88, 064308 (2013).
doi: 10.1103/PhysRevB.88.064308
Feher, G., Hensel, J. C. & Gere, E. A. Paramagnetic resonance absorption from acceptors in silicon. Phys. Rev. Lett. 5, 309–311 (1960).
doi: 10.1103/PhysRevLett.5.309
Mims, W. B. Phase memory in electron spin echoes, lattice relaxation effects in CaWO
doi: 10.1103/PhysRev.168.370
Abadillo-Uriel, J. C. et al. Entanglement control and magic angles for acceptor qubits in Si. Appl. Phys. Lett. 113, 012102 (2018).
doi: 10.1063/1.5036521
Köpf, A. & Lassmann, K. Linear Stark and nonlinear Zeeman coupling to the ground state of effective mass acceptors in silicon. Phys. Rev. Lett. 69, 1580–1583 (1992).
doi: 10.1103/PhysRevLett.69.1580
Bir, G., Butekov, E. & Pikus, G. Spin and combined resonance on acceptor centres in Ge and Si type crystals—I: paramagnetic resonance in strained and unstrained crystals. J. Phys. Chem. Solids 24, 1467–1474 (1963).
doi: 10.1016/0022-3697(63)90086-6
Bir, G., Butikov, E. & Pikus, G. Spin and combined resonance on acceptor centres in Ge and Si type crystals—II: the effect of the electrical field and relaxation time. J. Phys. Chem. Solids 24, 1475–1486 (1963).
doi: 10.1016/0022-3697(63)90087-8
Landau, L. D. & Lifshitz, E. M. Quantum Mechanics: Non-Relativistic Theory (Pergamon, 1981).
White, G. K. Thermal expansion of reference materials: copper, silica and silicon. J. Phys. D Appl. Phys. 6, 2070–2078 (1973).
doi: 10.1088/0022-3727/6/17/313

Auteurs

Takashi Kobayashi (T)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia. kobayashi20131124@gmail.com.
Department of Physics, Tohoku University, Sendai, Japan. kobayashi20131124@gmail.com.
CEMS, RIKEN, Wako, Japan. kobayashi20131124@gmail.com.

Joseph Salfi (J)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.

Cassandra Chua (C)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.

Joost van der Heijden (J)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.

Matthew G House (MG)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.

Dimitrie Culcer (D)

School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.
Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, The University of New South Wales Sydney, Sydney, New South Wales, Australia.

Wayne D Hutchison (WD)

School of Science, The University of New South Wales Canberra, Canberra, Australian Capital Territory, Australia.

Brett C Johnson (BC)

Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria, Australia.

Jeff C McCallum (JC)

Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria, Australia.

Helge Riemann (H)

Leibniz-Institut für Kristallzüchtung, Berlin, Germany.

Nikolay V Abrosimov (NV)

Leibniz-Institut für Kristallzüchtung, Berlin, Germany.

Peter Becker (P)

PTB Braunschweig, Braunschweig, Germany.

Hans-Joachim Pohl (HJ)

VITCON Projectconsult, Jena, Germany.

Michelle Y Simmons (MY)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.

Sven Rogge (S)

Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia. s.rogge@unsw.edu.au.

Classifications MeSH