Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors.
HfO2-based ferroelectrics
graphene
memtransistors
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
19 Jul 2020
19 Jul 2020
Historique:
received:
30
06
2020
revised:
14
07
2020
accepted:
16
07
2020
entrez:
26
7
2020
pubmed:
28
7
2020
medline:
28
7
2020
Statut:
epublish
Résumé
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO
Identifiants
pubmed: 32707647
pii: nano10071404
doi: 10.3390/nano10071404
pmc: PMC7408462
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
ID : PN-III-P4-ID-PCCF-2016-0033 "Grapheneferro"
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