Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
07 08 2020
Historique:
received: 23 11 2019
accepted: 20 07 2020
entrez: 10 8 2020
pubmed: 10 8 2020
medline: 10 8 2020
Statut: epublish

Résumé

Brain-inspired parallel computing, which is typically performed using a hardware neural-network platform consisting of numerous artificial synapses, is a promising technology for effectively handling large amounts of informational data. However, the reported nonlinear and asymmetric conductance-update characteristics of artificial synapses prevent a hardware neural-network from delivering the same high-level training and inference accuracies as those delivered by a software neural-network. Here, we developed an artificial van-der-Waals hybrid synapse that features linear and symmetric conductance-update characteristics. Tungsten diselenide and molybdenum disulfide channels were used selectively to potentiate and depress conductance. Subsequently, via training and inference simulation, we demonstrated the feasibility of our hybrid synapse toward a hardware neural-network and also delivered high recognition rates that were comparable to those delivered using a software neural-network. This simulation involving the use of acoustic patterns was performed with a neural network that was theoretically formed with the characteristics of the hybrid synapses.

Identifiants

pubmed: 32769980
doi: 10.1038/s41467-020-17849-3
pii: 10.1038/s41467-020-17849-3
pmc: PMC7414205
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

3936

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Auteurs

Seunghwan Seo (S)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Beom-Seok Kang (BS)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Je-Jun Lee (JJ)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Hyo-Jun Ryu (HJ)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Semiconductor R&D Center, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea.

Sungjun Kim (S)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Foundry Division, Samsung Electronics Co. Ltd., Youngin, 17113, Korea.

Hyeongjun Kim (H)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Seyong Oh (S)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Jaewoo Shim (J)

Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02139, USA.

Keun Heo (K)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.

Saeroonter Oh (S)

Division of Electrical Engineering, Hanyang University, Ansan, 15588, Korea.

Jin-Hong Park (JH)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. jhpark9@skku.edu.
Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea. jhpark9@skku.edu.

Classifications MeSH