X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals.
X-ray diffraction
X-ray topography
aluminium nitride
dislocations
Journal
Journal of applied crystallography
ISSN: 0021-8898
Titre abrégé: J Appl Crystallogr
Pays: United States
ID NLM: 9876190
Informations de publication
Date de publication:
01 Aug 2020
01 Aug 2020
Historique:
received:
17
02
2020
accepted:
01
07
2020
entrez:
14
8
2020
pubmed:
14
8
2020
medline:
14
8
2020
Statut:
epublish
Résumé
AlN slices from bulk crystals grown under low thermomechanical stress conditions via the physical vapor transport (PVT) method were analyzed by X-ray methods to study the influence of the growth mode on the crystal quality. Defect types and densities were analyzed along axial [0001] as well as lateral growth directions. X-ray diffraction (0110) rocking-curve mappings of representative wafer cuts reveal a low mean FWHM of 13.4 arcsec, indicating the generally high crystal quality. The total dislocation density of 2 × 10
Identifiants
pubmed: 32788905
doi: 10.1107/S1600576720008961
pii: te5057
pmc: PMC7401779
doi:
Types de publication
Journal Article
Langues
eng
Pagination
1080-1086Informations de copyright
© Thomas Wicht et al. 2020.