Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors.
2D materials
Bi2O2Se
high-k
native oxide
oxygen plasma
transistors
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
14 Oct 2020
14 Oct 2020
Historique:
pubmed:
4
9
2020
medline:
4
9
2020
entrez:
4
9
2020
Statut:
ppublish
Résumé
The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (ε
Identifiants
pubmed: 32881534
doi: 10.1021/acs.nanolett.0c02951
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM