Anionic Aliovalent Substitution from Structure Models of ZnS: Novel Defect Diamond-like Halopnictide Infrared Nonlinear Optical Materials with Wide Band Gaps and Large SHG Effects.

IR NLO materials anionic aliovalent substitution defect diamond-like structure halopnictides second-harmonic generation

Journal

Angewandte Chemie (International ed. in English)
ISSN: 1521-3773
Titre abrégé: Angew Chem Int Ed Engl
Pays: Germany
ID NLM: 0370543

Informations de publication

Date de publication:
21 Dec 2020
Historique:
received: 28 07 2020
revised: 25 08 2020
pubmed: 5 9 2020
medline: 5 9 2020
entrez: 5 9 2020
Statut: ppublish

Résumé

To design pnictide nonlinear optical materials with wide band gap and large second-harmonic generation, the heavy halogen I was introduced into pnictides through anionic aliovalent substitution with diamond-like ZnS as templates. Thus, four excellent halopnictide-based infrared nonlinear optical crystals, M

Identifiants

pubmed: 32885577
doi: 10.1002/anie.202010319
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

23549-23553

Subventions

Organisme : National Natural Science Foundation of China
ID : 51890862
Organisme : National Natural Science Foundation of China
ID : U1605245
Organisme : National Natural Science Foundation of China
ID : 21921001
Organisme : National Key Research and Development Plan of Ministry of Science and Technology
ID : 2016YFB0402104
Organisme : State Key Laboratory of Drug Research
ID : XDB20000000
Organisme : Strategic Priority Research Program of the Chinese Academy of Sciences
ID : XDB20000000

Informations de copyright

© 2020 Wiley-VCH GmbH.

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Auteurs

Jindong Chen (J)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
University of the Chinese Academy of Sciences, Beijing, 100049, China.

Chensheng Lin (C)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Dan Zhao (D)

College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan Province, 454000, China.

Min Luo (M)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Guang Peng (G)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Bingxuan Li (B)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Shunda Yang (S)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Yingshuang Sun (Y)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
University of the Chinese Academy of Sciences, Beijing, 100049, China.

Ning Ye (N)

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
Technology Innovation, Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002, China.

Classifications MeSH