Nanometer-Scale Uniform Conductance Switching in Molecular Memristors.

conductive atomic force microscopy memristor tip enhanced Raman spectroscopy transition metal complex uniformity

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Oct 2020
Historique:
received: 27 06 2020
revised: 02 08 2020
pubmed: 8 9 2020
medline: 8 9 2020
entrez: 7 9 2020
Statut: ppublish

Résumé

One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution <7 nm), it is shown that molecular switching in the films is uniform from hundreds of micrometers down to the nanoscale and that conductance value exactly correlates with spectroscopically determined molecular redox states. This provides a deterministic molecular route to obtain spatially homogeneous, forming-free switching that can conceivably overcome the chronic problems of robustness, consistency, reproducibility, and scalability in organic memristors.

Identifiants

pubmed: 32893411
doi: 10.1002/adma.202004370
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2004370

Subventions

Organisme : National Research Foundation Singapore
ID : NRF-CRP15-2015-01
Organisme : SERB
ID : SR/S2/JCB-09/2011
Organisme : SERB
ID : EMR/2014/000520
Organisme : Texas A and M University
Organisme : Agency for Science, Technology and Research
ID : A1983c0034

Informations de copyright

© 2020 Wiley-VCH GmbH.

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Auteurs

Sreetosh Goswami (S)

NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore.
NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore, 117456, Singapore.
Department of Physics, National University of Singapore, Singapore, 117542, Singapore.

Debalina Deb (D)

Department of Physics, University of Kalyani, Kalyani, West Bengal, 741235, India.

Agnès Tempez (A)

HORIBA FRANCE SAS, HORIBA Scientific, Palaiseau, 91120, France.

Marc Chaigneau (M)

HORIBA FRANCE SAS, HORIBA Scientific, Palaiseau, 91120, France.

Santi Prasad Rath (SP)

HORIBA FRANCE SAS, HORIBA Scientific, Palaiseau, 91120, France.
School of Chemical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, West Bengal, 700032, India.

Manohar Lal (M)

Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore.
NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore, 117456, Singapore.
Department of Physics, National University of Singapore, Singapore, 117542, Singapore.

R Stanley Williams (RS)

Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, 77843, USA.

Sreebrata Goswami (S)

School of Chemical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, West Bengal, 700032, India.

Thirumalai Venkatesan (T)

NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore.
NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore, 117456, Singapore.
Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
Materials Science and Engineering Department, National University of Singapore, Singapore, 117575, Singapore.

Classifications MeSH