Thermal Transport across Ion-Cut Monocrystalline β-Ga

SiC TDTR gallium oxide ion-cutting surface activated bonding thermal boundary conductance thermal management

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
07 Oct 2020
Historique:
pubmed: 11 9 2020
medline: 11 9 2020
entrez: 10 9 2020
Statut: ppublish

Résumé

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga

Identifiants

DOI: 10.1021/acsami.0c11672 PMID: 32909730
pubmed: 32909730
doi: 10.1021/acsami.0c11672
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

44943-44951

Auteurs

Zhe Cheng (Z)

George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
ORCID: 0000-0001-7827-2979

Fengwen Mu (F)

Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051, Japan.
Collaborative Research Center, Meisei University, Hino-shi, Tokyo 191-8506, Japan.
ORCID: 0000-0001-7396-9347

Tiangui You (T)

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Wenhui Xu (W)

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Jingjing Shi (J)

George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Michael E Liao (ME)

Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States.

Yekan Wang (Y)

Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States.

Kenny Huynh (K)

Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States.

Tadatomo Suga (T)

Collaborative Research Center, Meisei University, Hino-shi, Tokyo 191-8506, Japan.

Mark S Goorsky (MS)

Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States.

Xin Ou (X)

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
ORCID: 0000-0002-0316-9958

Samuel Graham (S)

George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
ORCID: 0000-0002-1299-1636

Classifications MeSH