The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
10 Sep 2020
10 Sep 2020
Historique:
received:
05
03
2020
accepted:
15
06
2020
entrez:
11
9
2020
pubmed:
12
9
2020
medline:
12
9
2020
Statut:
epublish
Résumé
Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the region of interest on a sample cross section. In this work, we investigate the impact of the focused ion beam milling on spreading resistance analysis and we show that the electrical effect of the focused ion beam extends far beyond the amorphous region and depends on the dopant concentration, ion beam energy, impact angle, and current density. For example, for dopant concentrations between 1.0 × 10
Identifiants
pubmed: 32913186
doi: 10.1038/s41598-020-71826-w
pii: 10.1038/s41598-020-71826-w
pmc: PMC7483413
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
14893Références
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