Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces.

ferroelectric polarization first-principles inversion symmetry breaking oxides heterostructures oxygen vacancies perovskite

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
07 Oct 2020
Historique:
pubmed: 16 9 2020
medline: 16 9 2020
entrez: 15 9 2020
Statut: ppublish

Résumé

Introducing point defects in complex metal oxides is a very effective route to engineer crystal symmetry and therefore control physical properties. However, the inversion symmetry breaking, which is vital for many tantalizing properties, such as ferroelectricity and chiral spin structure, is usually hard to be induced in the bulk crystal by point defects. By designing the oxygen vacancy formation energy profile and migration path across the oxide heterostructure, our first-principles density functional theory (DFT) calculations demonstrate that the point defects can effectively break the inversion symmetry and hence create novel ferroelectricity in superlattices consisting of otherwise nonferroelectric materials SrTiO

Identifiants

pubmed: 32929952
doi: 10.1021/acsami.0c13314
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

45602-45610

Auteurs

Ri He (R)

Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China.
International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, China.

Jun Liang Lin (JL)

College of Light Industry, Liaoning University, Shenyang 110036, China.
School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.

Qing Liu (Q)

Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Zhaoliang Liao (Z)

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China.

Lingling Shui (L)

School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China.

Zhan Jie Wang (ZJ)

School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.

Zhicheng Zhong (Z)

Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

Run-Wei Li (RW)

Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

Classifications MeSH