Microfabrication Process-Driven Design, FEM Analysis and System Modeling of 3-DoF Drive Mode and 2-DoF Sense Mode Thermally Stable Non-Resonant MEMS Gyroscope.
MEMS gyroscope
finite element method (FEM)
microfabrication
multi-degree of freedom (multi-DoF)
non-resonant
robustness
system modeling
thermal stability
Journal
Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903
Informations de publication
Date de publication:
17 Sep 2020
17 Sep 2020
Historique:
received:
06
07
2020
revised:
18
08
2020
accepted:
14
09
2020
entrez:
22
9
2020
pubmed:
23
9
2020
medline:
23
9
2020
Statut:
epublish
Résumé
This paper presents microfabrication process-driven design of a multi-degree of freedom (multi-DoF) non-resonant electrostatic microelectromechanical systems (MEMS) gyroscope by considering the design constraints of commercially available low-cost and widely-used silicon-on-insulator multi-user MEMS processes (SOIMUMPs), with silicon as a structural material. The proposed design consists of a 3-DoF drive mode oscillator with the concept of addition of a collider mass which transmits energy from the drive mass to the passive sense mass. In the sense direction, 2-DoF sense mode oscillator is used to achieve dynamically-amplified displacement in the sense mass. A detailed analytical model for the dynamic response of MEMS gyroscope is presented and performance characteristics are validated through finite element method (FEM)-based simulations. The effect of operating air pressure and temperature variations on the air damping and resulting dynamic response is analyzed. The thermal stability of the design and corresponding effect on the mechanical and capacitive sensitivity, for an operating temperature range of -40 °C to 100 °C, is presented. The results showed that the proposed design is thermally stable, robust to environmental variations, and process tolerances with a wide operational bandwidth and high sensitivity. Moreover, a system-level model of the proposed gyroscope and its integration with the sensor electronics is presented to estimate the voltage sensitivity under the constraints of the readout electronic circuit.
Identifiants
pubmed: 32957573
pii: mi11090862
doi: 10.3390/mi11090862
pmc: PMC7570342
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Higher Education Commission, Pakistan
ID : TDF-02-065
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