Microfabrication Process-Driven Design, FEM Analysis and System Modeling of 3-DoF Drive Mode and 2-DoF Sense Mode Thermally Stable Non-Resonant MEMS Gyroscope.

MEMS gyroscope finite element method (FEM) microfabrication multi-degree of freedom (multi-DoF) non-resonant robustness system modeling thermal stability

Journal

Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903

Informations de publication

Date de publication:
17 Sep 2020
Historique:
received: 06 07 2020
revised: 18 08 2020
accepted: 14 09 2020
entrez: 22 9 2020
pubmed: 23 9 2020
medline: 23 9 2020
Statut: epublish

Résumé

This paper presents microfabrication process-driven design of a multi-degree of freedom (multi-DoF) non-resonant electrostatic microelectromechanical systems (MEMS) gyroscope by considering the design constraints of commercially available low-cost and widely-used silicon-on-insulator multi-user MEMS processes (SOIMUMPs), with silicon as a structural material. The proposed design consists of a 3-DoF drive mode oscillator with the concept of addition of a collider mass which transmits energy from the drive mass to the passive sense mass. In the sense direction, 2-DoF sense mode oscillator is used to achieve dynamically-amplified displacement in the sense mass. A detailed analytical model for the dynamic response of MEMS gyroscope is presented and performance characteristics are validated through finite element method (FEM)-based simulations. The effect of operating air pressure and temperature variations on the air damping and resulting dynamic response is analyzed. The thermal stability of the design and corresponding effect on the mechanical and capacitive sensitivity, for an operating temperature range of -40 °C to 100 °C, is presented. The results showed that the proposed design is thermally stable, robust to environmental variations, and process tolerances with a wide operational bandwidth and high sensitivity. Moreover, a system-level model of the proposed gyroscope and its integration with the sensor electronics is presented to estimate the voltage sensitivity under the constraints of the readout electronic circuit.

Identifiants

pubmed: 32957573
pii: mi11090862
doi: 10.3390/mi11090862
pmc: PMC7570342
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Higher Education Commission, Pakistan
ID : TDF-02-065

Références

Micromachines (Basel). 2019 Nov 25;10(12):
pubmed: 31775325
Micromachines (Basel). 2019 Apr 14;10(4):
pubmed: 31013981
Sensors (Basel). 2010;10(6):6149-71
pubmed: 22219707
Micromachines (Basel). 2018 Oct 10;9(10):
pubmed: 30424444
Micromachines (Basel). 2018 Nov 05;9(11):
pubmed: 30400677

Auteurs

Syed Ali Raza Bukhari (SAR)

Department of Mechatronics Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.

Muhammad Mubasher Saleem (MM)

Department of Mechatronics Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.
National Centre of Robotics and Automation(NCRA), Islamabad 44000, Pakistan.

Umar Shahbaz Khan (US)

Department of Mechatronics Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.
National Centre of Robotics and Automation(NCRA), Islamabad 44000, Pakistan.

Amir Hamza (A)

Department of Mechatronics Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.
National Centre of Robotics and Automation(NCRA), Islamabad 44000, Pakistan.

Javaid Iqbal (J)

Department of Mechatronics Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.
National Centre of Robotics and Automation(NCRA), Islamabad 44000, Pakistan.

Rana Iqtidar Shakoor (RI)

National Centre of Robotics and Automation(NCRA), Islamabad 44000, Pakistan.
Department of Mechatronics Engineering, Air University, Islamabad 44000, Pakistan.

Classifications MeSH