Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C.
ALD
defect level
passivation
photodiode
silicon oxidation
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
14 Oct 2020
14 Oct 2020
Historique:
pubmed:
23
9
2020
medline:
23
9
2020
entrez:
22
9
2020
Statut:
ppublish
Résumé
Low-temperature (LT) passivation methods (<450 °C) for decreasing defect densities in the material combination of silica (SiO
Identifiants
pubmed: 32960564
doi: 10.1021/acsami.0c12636
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM