Electronic properties of the Sn
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
08 Oct 2020
08 Oct 2020
Historique:
received:
23
02
2020
accepted:
28
07
2020
entrez:
9
10
2020
pubmed:
10
10
2020
medline:
10
10
2020
Statut:
epublish
Résumé
Tin monoxide (SnO) has attracted attention due to its p-type character and capability of ambipolar conductivity when properly doped, properties that are beneficial for the realization of complementary oxide thin film transistors technology, transparent flexible circuits and optoelectronic applications in general. However, its small fundamental band gap (0.7 eV) limits its applications as a solar energy material, therefore tuning its electronic properties is necessary for optimal performance. In this work, we use density functional theory (DFT) calculations to examine the electronic properties of the Sn
Identifiants
pubmed: 33033273
doi: 10.1038/s41598-020-73703-y
pii: 10.1038/s41598-020-73703-y
pmc: PMC7545099
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
16828Subventions
Organisme : National Strategic Reference Framework
ID : MIS5041612
Organisme : National Strategic Reference Framework
ID : MIS 5002409
Organisme : National Strategic Reference Framework
ID : MIS 5002772
Organisme : H2020 European Research Council
ID : 824072-HARVESTORE
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