Symmetry induced phonon renormalization in few layers of 2H-MoTe


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
22 Jan 2021
Historique:
pubmed: 10 10 2020
medline: 10 10 2020
entrez: 9 10 2020
Statut: ppublish

Résumé

Understanding of electron-phonon coupling (EPC) in two-dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in situ Raman measurements of electrochemically top-gated 2, 3 and 7 layered 2H-MoTe

Identifiants

pubmed: 33036010
doi: 10.1088/1361-6528/abbfd6
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

045202

Auteurs

Subhadip Das (S)

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

Koyendrila Debnath (K)

Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India.

Biswanath Chakraborty (B)

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

Anjali Singh (A)

Center for Study of Science, Technology & Policy (CSTEP), Bangalore 560094, India.

Shivani Grover (S)

Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India.

D V S Muthu (DVS)

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

U V Waghmare (UV)

Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India.

A K Sood (AK)

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

Classifications MeSH