Understanding the Switching Mechanisms of the Antiferromagnet/Ferromagnet Heterojunction.

antiferromagnets interface exchange coupling magnetization dynamics magnetoelectric multiferroic spintronics

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
11 Nov 2020
Historique:
pubmed: 16 10 2020
medline: 16 10 2020
entrez: 15 10 2020
Statut: ppublish

Résumé

Electric-field-driven spintronic devices are considered promising candidates for beyond CMOS logic and memory applications thanks to their potential for ultralow energy switching and nonvolatility. In this work, we have developed a comprehensive modeling framework to understand the fundamental physics of the switching mechanisms of the antiferromagnet/ferromagnet heterojunction by taking BiFeO

Identifiants

pubmed: 33054222
doi: 10.1021/acs.nanolett.0c01852
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7919-7926

Auteurs

Yu-Ching Liao (YC)

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Dmitri E Nikonov (DE)

Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States.

Sourav Dutta (S)

Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States.

Sou-Chi Chang (SC)

Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States.

Chia-Sheng Hsu (CS)

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Ian A Young (IA)

Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States.

Azad Naeemi (A)

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Classifications MeSH