Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.

Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
15 Oct 2020
Historique:
received: 26 06 2020
accepted: 28 09 2020
entrez: 16 10 2020
pubmed: 17 10 2020
medline: 17 10 2020
Statut: epublish

Résumé

Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg concentrations of 1 × 10

Identifiants

DOI: 10.1038/s41598-020-74362-9 PMID: 33060712 PMC: PMC7562725
pubmed: 33060712
doi: 10.1038/s41598-020-74362-9
pii: 10.1038/s41598-020-74362-9
pmc: PMC7562725
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

17349

Subventions

Organisme : Research and development of next-generation semiconductor to realize energy-saving society
ID : JPJ005357
Organisme : Polish National Science Centre through project
ID : 2018/29/B/ST5/00338

Références

Phys Rev Lett. 2012 Apr 13;108(15):156403
pubmed: 22587269
J Phys Condens Matter. 2019 Nov 27;31(47):475401
pubmed: 31429422

Auteurs

Akira Uedono (A)

Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan. uedono.akira.gb@u.tsukuba.ac.jp.

Hideki Sakurai (H)

IMaSS, Nagoya University, Aichi, 464-8601, Japan.
Department of Electronics, Graduate School of Engineering, Nagoya University, Aichi, 464-8601, Japan.
ISET, ULVAC, Inc., Chigasaki, Kanagawa, 253-8543, Japan.

Tetsuo Narita (T)

Toyota Central R&D Labs., Inc., Nagakute, Aichi, 480-1192, Japan.

Kacper Sierakowski (K)

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142, Warsaw, Poland.

Michal Bockowski (M)

IMaSS, Nagoya University, Aichi, 464-8601, Japan.
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142, Warsaw, Poland.

Jun Suda (J)

IMaSS, Nagoya University, Aichi, 464-8601, Japan.
Department of Electronics, Graduate School of Engineering, Nagoya University, Aichi, 464-8601, Japan.

Shoji Ishibashi (S)

Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568, Japan.

Shigefusa F Chichibu (SF)

IMaSS, Nagoya University, Aichi, 464-8601, Japan.
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577, Japan.

Tetsu Kachi (T)

IMaSS, Nagoya University, Aichi, 464-8601, Japan.

Classifications MeSH