Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals-Like Bonding on Te-Terminated Sapphire Substrates.

interfaces layer transfer self-assembly thin films van der Waals epitaxy

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
Nov 2020
Historique:
received: 23 07 2020
revised: 04 09 2020
pubmed: 21 10 2020
medline: 21 10 2020
entrez: 20 10 2020
Statut: ppublish

Résumé

Here the novel direct heteroepitaxial growth method of a 3D heteroepitaxial system is demonstrated on a 3D substrate, CdTe (111)/Al

Identifiants

pubmed: 33078550
doi: 10.1002/smll.202004437
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2004437

Subventions

Organisme : Natural Sciences and Engineering Research Council of Canada
Organisme : CCEM
Organisme : NSERC
Organisme : Canada Foundation for Innovation and McMaster University

Informations de copyright

© 2020 Wiley-VCH GmbH.

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Auteurs

Stephen M Jovanovic (SM)

Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7, Canada.

Hesham M El-Sherif (HM)

Department of Materials Science and Engineering, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7, Canada.

Nabil D Bassim (ND)

Department of Materials Science and Engineering, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7, Canada.

John S Preston (JS)

Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario, L8S 4L7, Canada.

Classifications MeSH