Identifying Optimal Strain in Bismuth Telluride Thermoelectric Film by Combinatorial Gradient Thermal Annealing and Machine Learning.

annealing bismuth telluride coating combinatorial internal strain machine learning neural network sputtering thermoelectric thin film

Journal

ACS combinatorial science
ISSN: 2156-8944
Titre abrégé: ACS Comb Sci
Pays: United States
ID NLM: 101540531

Informations de publication

Date de publication:
14 12 2020
Historique:
pubmed: 5 11 2020
medline: 1 9 2021
entrez: 4 11 2020
Statut: ppublish

Résumé

The thermoelectric properties of bismuth telluride thin film (BTTF) was tuned by inducing internal strain through a combination of combinatorial gradient thermal annealing (COGTAN) and machine learning. BTTFs were synthesized via magnetron sputter coating and then treated by COGTAN. The crystal structure and thermoelectric properties, namely Seebeck coefficient and thermal conductivity, of the treated samples were analyzed via micropoint X-ray diffraction and scanning thermal probe microimaging, respectively. The obtained combinatorial data reveals the correlation between internal strain and the thermoelectric properties. The Seebeck coefficient of BTTF exhibits largest sensitivity, where the value ranges from 7.9 to -108 μV/K. To further explore the possibility to enhance Seebeck coefficient, the combinatorial data were subjected to machine learning. The trained model predicts that optimal strains of 3-4% and 1-2% along the

Identifiants

pubmed: 33146513
doi: 10.1021/acscombsci.0c00112
doi:

Substances chimiques

bismuth telluride 1818R19OHO
Tellurium NQA0O090ZJ
Bismuth U015TT5I8H

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

782-790

Auteurs

Michiko Sasaki (M)

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

Shenghong Ju (S)

Department of Mechanical Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan.
China-UK Low Carbon College, Shanghai Jiao Tong University, Shanghai 201306, China.
Materials Genome Initiative Center, Shanghai Jiao Tong University, Shanghai 200240, China.

Yibin Xu (Y)

Research and Services Division of Materials Data and Integrated System (MaDIS), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

Junichiro Shiomi (J)

Department of Mechanical Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan.
Research and Services Division of Materials Data and Integrated System (MaDIS), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

Masahiro Goto (M)

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

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Classifications MeSH