Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications.

Electrical Property Electronic Engineering Materials Science

Journal

iScience
ISSN: 2589-0042
Titre abrégé: iScience
Pays: United States
ID NLM: 101724038

Informations de publication

Date de publication:
20 Nov 2020
Historique:
entrez: 9 11 2020
pubmed: 10 11 2020
medline: 10 11 2020
Statut: epublish

Résumé

Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

Identifiants

pubmed: 33163934
doi: 10.1016/j.isci.2020.101676
pii: S2589-0042(20)30868-3
pmc: PMC7600392
doi:

Types de publication

Journal Article Review

Langues

eng

Pagination

101676

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Auteurs

Tae-Jun Ko (TJ)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.

Hao Li (H)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.

Sohrab Alex Mofid (SA)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.

Changhyeon Yoo (C)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.

Emmanuel Okogbue (E)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.

Sang Sub Han (SS)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, South Korea.

Mashiyat Sumaiya Shawkat (MS)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.

Adithi Krishnaprasad (A)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.

Molla Manjurul Islam (MM)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Physics, University of Central Florida, Orlando, FL 32816, USA.

Durjoy Dev (D)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.

Yongjun Shin (Y)

Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, South Korea.

Kyu Hwan Oh (KH)

Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, South Korea.

Gwan-Hyoung Lee (GH)

Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, South Korea.
Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea.
Institute of Engineering Research, Seoul National University, Seoul, 08826, South Korea.
Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea.

Tania Roy (T)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA.

Yeonwoong Jung (Y)

NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.
Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA.

Classifications MeSH