Anisotropic Performance of High-Quality MAPbBr
growth method
in-plane anisotropy
oriented wafers
perovskite single crystals
photoelectronic anisotropy
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
18 Nov 2020
18 Nov 2020
Historique:
pubmed:
10
11
2020
medline:
10
11
2020
entrez:
9
11
2020
Statut:
ppublish
Résumé
It has been proved that bulk single crystals of a halide perovskite behave much better than its polycrystalline counterparts in multiple application scenarios. Thus, the growth of large-sized and high-quality single crystals is significant to guarantee their ultimate device performances. Here, based on our recently invented settled temperature and controlled antisolvent diffusion system, improvements achieved in this work include the following: (1) We modified the growth system to optimize the control over both mass and heat transport to alleviate defect formation. State-of-the-art-quality MAPbBr
Identifiants
pubmed: 33164486
doi: 10.1021/acsami.0c14582
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM